Other articles related with "plasma treatment":
85202 Peng-Ying Jia(贾鹏英), Han-Xiao Jia(贾焓潇), Jun-Xia Ran(冉俊霞), Kai-Yue Wu(吴凯玥), Jia-Cun Wu(武珈存), Xue-Xia Pang(庞学霞), and Xue-Chen Li(李雪辰)
  Efficient hydrophilicity improvement of titanium surface by plasma jet in micro-hollow cathode discharge geometry
    Chin. Phys. B   2023 Vol.32 (8): 85202-085202 [Abstract] (127) [HTML 1 KB] [PDF 1505 KB] (84)
117301 Dongyan Zhao(赵东艳), Yubo Wang(王于波), Yanning Chen(陈燕宁), Jin Shao(邵瑾), Zhen Fu(付振), Fang Liu(刘芳), Yanrong Cao(曹艳荣), Faqiang Zhao(赵法强), Mingchen Zhong(钟明琛), Yasong Zhang(张亚松), Maodan Ma(马毛旦), Hanghang Lv(吕航航), Zhiheng Wang(王志恒), Ling Lv(吕玲), Xuefeng Zheng(郑雪峰), and Xiaohua Ma(马晓华)
  Fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress
    Chin. Phys. B   2022 Vol.31 (11): 117301-117301 [Abstract] (311) [HTML 1 KB] [PDF 916 KB] (36)
88101 Ling-Xiao Sheng(盛凌霄), Cheng-Ke Chen(陈成克), Mei-Yan Jiang(蒋梅燕), Xiao Li(李晓), Xiao-Jun Hu(胡晓君)
  Effects of microwave oxygen plasma treatments on microstructure and Ge-V photoluminescent properties of diamond particles
    Chin. Phys. B   2020 Vol.29 (8): 88101-088101 [Abstract] (520) [HTML 0 KB] [PDF 793 KB] (121)
75204 Hong-Lu Guan(关弘路), Xiang-Rong Chen(陈向荣), Tie Jiang(江铁), Hao Du(杜浩), Ashish Paramane, Hao Zhou(周浩)
  Electrical modeling of dielectric barrier discharge considering surface charge on the plasma modified material
    Chin. Phys. B   2020 Vol.29 (7): 75204-075204 [Abstract] (739) [HTML 0 KB] [PDF 1874 KB] (133)
128101 Jian-Ying Chen(陈建颖), Xin-Yuan Zhao(赵心愿), Lu Liu(刘璐), Jing-Ping Xu(徐静平)
  Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics
    Chin. Phys. B   2019 Vol.28 (12): 128101-128101 [Abstract] (679) [HTML 1 KB] [PDF 1778 KB] (173)
117304 Fang Liu(刘芳), Zhixin Qin(秦志新)
  Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact
    Chin. Phys. B   2016 Vol.25 (11): 117304-117304 [Abstract] (655) [HTML 1 KB] [PDF 433 KB] (266)
127304 Liu Chao-Wen (刘超文), Xu Jing-Ping (徐静平), Liu Lu (刘璐), Lu Han-Han (卢汉汉)
  High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
    Chin. Phys. B   2015 Vol.24 (12): 127304-127304 [Abstract] (663) [HTML 1 KB] [PDF 343 KB] (352)
67306 Tong Xiao-Lin (佟晓林), Xia Xiao-Zhi (夏晓智), Li Qing-Xia (李青侠)
  Enhanced ultraviolet photoresponse based on ZnO nanocrystals/Pt bilayer nanostructure
    Chin. Phys. B   2015 Vol.24 (6): 67306-067306 [Abstract] (583) [HTML 1 KB] [PDF 758 KB] (302)
58501 Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游)
  Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor
    Chin. Phys. B   2011 Vol.20 (5): 58501-058501 [Abstract] (1474) [HTML 0 KB] [PDF 284 KB] (841)
27303 Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
  Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
    Chin. Phys. B   2011 Vol.20 (2): 27303-027303 [Abstract] (1636) [HTML 1 KB] [PDF 838 KB] (1058)
105203 Wang Xiao-Ping(王小平), Wang Zi(王子), Wang Li-Jun(王丽军), and Mei Cui-Yu(梅翠玉)
  Synthesis of ZnO films with a special texture and enhanced field emission properties
    Chin. Phys. B   2011 Vol.20 (10): 105203-105203 [Abstract] (1211) [HTML 0 KB] [PDF 180 KB] (779)
18101 Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游)
  Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis
    Chin. Phys. B   2011 Vol.20 (1): 18101-018101 [Abstract] (1713) [HTML 1 KB] [PDF 634 KB] (1104)
524 Qian Xiao-Mei(钱晓梅), Wei Yong-Xia(卫永霞), Yu Xiao-Zhu(俞笑竹), Ye Chao(叶超), Ning Zhao-Yuan(宁兆元), and Liang Rong-Qing(梁荣庆)
  Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment
    Chin. Phys. B   2007 Vol.16 (2): 524-528 [Abstract] (1298) [HTML 1 KB] [PDF 174 KB] (610)
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